Semiconductor integrated circuit device with isolation grooves a

Details Semiconductor integrated circuit device with isolation grooves a Semiconductor integrated circuit device with isolation grooves a

1989-11-17

1992-07-07

Mintel, William

357 59, 357 34, 357 55, 357 50, 357 49, H01L 2702

Patent

active

051287404

ABSTRACT:
This invention relates to a semiconductor integrated circuit device including highly self-aligned bipolar transistors. The semiconductor integrated circuit device a semiconductor body at least a first protruding portion and a hollow portion, disposed as a trench. The hollow portion being adjacent to the first protruding portion and being lower than an upper surface of the first protruding portion and including an isolation groove which is formed along a side surface of the protruding portion and in self-alignment with a peripheral edge portion of the upper surface of the first protruding portion. The device also has insulating material formed on a surface of the hollow portion so as to fill the insulation groove, a first semiconductor region of a first conductivity type formed in the first protruding portion, a portion of said first semiconductor region being exposed to the side surface of the protruding portion, a second semiconductor region of a second conductivity type opposite to the first conductivity type formed in the first protruding portion on the first semiconductor region, a third semiconductor region of the second conductivity type formed in the first protruding portion under the first semiconductor region and a polycrystalline silicon film formed on the insulating material in contact with at least the portion of the first semiconductor region exposed to the side surface of the protruding portion.

REFERENCES:
patent: 4808548 (1989-02-01), Thomas et al.
patent: 4887145 (1989-12-01), Washio et al.
patent: 4910575 (1990-03-01), Komeda et al.

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