Silicon mesa transistor structure

Details Silicon mesa transistor structure Silicon mesa transistor structure

1991-05-17

1992-07-07

Hille, Rolf

357 4, 357 59, 357 54, H01L 2701, H01L 2712, H01L 2934

Patent

active

051287331

ABSTRACT:
A silicon on insulator transistor employs a thick field insulator overlapping silicon mesas, the overlap area beneath the interface between the transistor gate and the sidewall being doped to increase the threshold for parasitic transistors above that of the transistor.

REFERENCES:
patent: 4974051 (1990-11-01), Matloubian et al.
patent: 5001528 (1991-03-01), Bahraman
patent: 5012311 (1991-04-01), Shirato
patent: 5037781 (1991-08-01), Woodruff et al.

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