Vertical type MOS transistor and its chip

Details Vertical type MOS transistor and its chip Vertical type MOS transistor and its chip

1986-02-06

1989-04-04

James, Andrew J.

357 2313, 357 238, 357 13, H01L 2978

Patent

active

048190446

ABSTRACT:
A vertical type MOS transistor and its chip comprise at least one MOS transistor portion consisting of a semiconductor layer having at least a first P-N junction, sandwiched by a source electrode through an insulating layer and a drain electrode, and a Zener diode portion having a second P-N junction formed in parallel with and adjacent to the MOS transistor portion in said semiconductor layer, the conductive level of said second P-N junction of the diode portion being lower than that of the first P-N junction of the transistor portion. With this construction, when a large surge voltage above a predetermined breakdown point of the Zener diode portion is applied to the source and drain electrodes, the Zener diode portion is first rendered conductive and any breakdown of the MOS transistor portion can be prevented.

REFERENCES:
patent: 4345265 (1982-08-01), Blanchard
patent: 4399449 (1983-08-01), Herman et al.
patent: 4484206 (1984-11-01), Moroshima et al.
patent: 4532534 (1985-07-01), Ford et al.
patent: 4608584 (1986-08-01), Mihara
patent: 4631564 (1986-12-01), Neilson et al.
patent: 4686551 (1987-08-01), Mihara

Affiliated with

Also associated with

Rating

Vertical type MOS transistor and its chip does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Vertical type MOS transistor and its chip, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Vertical type MOS transistor and its chip will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-183274