Method of forming a capacitor over a semiconductor substrate

Details Method of forming a capacitor over a semiconductor substrate Method of forming a capacitor over a semiconductor substrate

1996-11-13

1997-11-04

Nguyen, Tuan H.

Fishing, trapping, and vermin destroying

437 47, 437 52, 437919, H01L 2170

Patent

active

056839316

ABSTRACT:
The present invention provides a method of forming a capacitor over a semiconductor substrate. The method comprises the following steps. A first insulation film is formed to cover a semiconductor substrate. A first conductive film is formed over the first insulation film. A capacitive insulation film is formed over the first conductive film. A second conductive film is formed over the capacitive insulation film. A second insulation film is formed over the second conductive film. A first photo-resist material is provided over the second insulation film. The first photo-resist material is subjected to a first exposure and a first development to define a first photo-resist pattern. The capacitive insulation film, the second conductive film and the second insulation film are subjected to a first anisotropic dry etching which uses the first photo-resist pattern as a mask to define a top electrode and a capacitive dielectric film. The first photo-resist pattern is removed. A second photo-resist material is provided on the first conductive film and the second insulation film remaining. The second photo-resist material is subjected to a second exposure and a second development to define a second photo-resist pattern. The first conductive film is subjected to a second anisotropic dry etching which uses the second photo-resist pattern as a mask to define a bottom electrode.

REFERENCES:
patent: 5173437 (1992-12-01), Chi
patent: 5356826 (1994-10-01), Natsume
patent: 5397729 (1995-03-01), Kayanuma et al.
patent: 5434098 (1995-07-01), Chang
patent: 5489547 (1996-02-01), Erdeljac et al.
patent: 5554558 (1996-09-01), Hsu et al.

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