Method of making a low noise semiconductor device comprising a s

Details Method of making a low noise semiconductor device comprising a s Method of making a low noise semiconductor device comprising a s

1996-07-03

1997-11-04

Chaudhari, Chandra

Fishing, trapping, and vermin destroying

437226, H01L 2166

Patent

active

056839170

ABSTRACT:
The disclosed method of making a semiconductor device comprises a screening procedure that facilitates identification of devices having relatively low flicker noise. The devices are typically semiconductor diodes. The procedure utilizes our discovery of a correlation between the reverse bias current I.sub.r of a semiconductor device and the flicker noise power, and comprises measurement of the reverse bias current and comparison of the measured value with a predetermined comparison value I.sub.rc. Devices having I.sub.r .ltoreq.I.sub.rc are those that have relatively low flicker noise. The screening procedure is simple and quick, and can be readily performed in a manufacturing environment.

REFERENCES:
patent: 5032786 (1991-07-01), Kimura
patent: 5399505 (1995-03-01), Dasse et al.
patent: 5489538 (1996-02-01), Rostoker et al.

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