Metal gate, interconnect and contact system for VLSI devices

Details Metal gate, interconnect and contact system for VLSI devices Metal gate, interconnect and contact system for VLSI devices

1984-06-25

1987-06-09

Carroll, J.

357 67, 357 239, 357 41, 357 65, H01L 2348

Patent

active

046724192

ABSTRACT:
A metal gate and contact/interconnect system for MOS VLSI devices employs a multiple-level refractory metal structure including a thin layer of molybdenum for adhesion to oxide and a thicker layer of tungsten over the molybdenum. The metal gate is encapsulated in oxide during a self-aligned siliciding operation. A contact to the silicide-clad source/drain region includes a thin tungsten layer, then the molybdenum/tungstem stack, and a top layer of gold.

REFERENCES:
patent: 3657029 (1972-04-01), Fuller
patent: 3724065 (1973-04-01), Carbajal, III et al.
patent: 4141022 (1979-02-01), Sigg et al.
patent: 4445134 (1984-04-01), Miller
patent: 4478679 (1984-10-01), Chang et al.
patent: 4506279 (1985-03-01), Mizutani

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