1984-07-17
1987-06-09
James, Andrew J.
357 68, 357 75, H01L 2504, H01L 2350, H01L 2306, H01L 2944
Patent
active
046724176
ABSTRACT:
In a 3-terminal package sealed semiconductor device such as a transistor or a thyristor, an insulator formed between the respective lead conductors is made of alumina ceramic. An electrode conductor base (one of the lead conductors) for mounting a semiconductor device thereon is made of a copper-tungsten sintered alloy containing 2% by volume to 48% by volume of copper. The thermal expansion coefficient of the insulator becomes substantially the same as that of the electrode conductor base, thereby elmininating a conventionally used intermediate damping member and hence providing a compact semiconductor apparatus which has a high packaging density and which can switch a large current at high speed. The respective lead conductors have predetermined sizes to achieve high-speed large-current switching.
REFERENCES:
patent: 3387190 (1968-06-01), Winkler
patent: 3685134 (1972-08-01), Blue
patent: 3784884 (1974-06-01), Zoroglu
patent: 3969754 (1976-07-01), Kuniya et al.
patent: 3996603 (1976-12-01), Smith
Mitsui et al "10 GHz-Low . . . FETS" Conf. Tech. Growth for the 80's, 1980, IEEE MTT-S Int. Microwave Symposium Digest, Wash. D.C., USA, May 28-30, 1980.
Kamiya Tokimasa
Nakamura Yoshio
Ohno Harunobu
Sugiyama Susumu
Jackson Jerome
James Andrew J.
Kabushiki Kaisha Toyota Chuo Kenkyusho and Narumi
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