Method of fabricating trench isolation structure having tapered

Details Method of fabricating trench isolation structure having tapered Method of fabricating trench isolation structure having tapered

1996-08-30

1997-11-04

Fourson, George

Fishing, trapping, and vermin destroying

1566441, 437947, 437981, H01L 2176

Patent

active

056839081

ABSTRACT:
A device-isolating trench having a taper at its upper portion is formed in a silicon semiconductor substrate. Then, a silicon oxide film is formed on the inner wall of the trench and the surface of the semiconductor substrate near the trench by an oxidizing method, and polycrystalline silicon is buried in the trench.

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