Lateral subsurface zener diode

Details Lateral subsurface zener diode Lateral subsurface zener diode

1985-09-23

1987-06-09

Carroll, J.

357 20, 357 63, 357 88, 357 91, H01L 2990, H01L 2906

Patent

active

046724036

ABSTRACT:
A subsurface zener diode is formed in an N type semiconductor substrate such as the kind employed in the epitaxial layer found in silicon monolithic PN junction isolated integrated circuits. A P+ anode is ion implanted into and diffused from an oxide source and an N++ cathode is diffused within the confines of the anode. The cathode is surrounded with a counter-doped region that forces the PN junction breakdown subsurface. The resulting diode has a clean, sharp breakdown curve and the breakdown voltage can be tailored by controlling the anode deposition.

REFERENCES:
patent: 3881179 (1975-04-01), Howard, Jr.
patent: 4079402 (1978-03-01), Dunkley et al.
patent: 4119440 (1978-10-01), Hill
patent: 4136349 (1979-01-01), Tsang
patent: 4484206 (1984-11-01), Moroshima et al.

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