Surface acoustic wave devices and method of manufacture thereof

Electrical generator or motor structure – Non-dynamoelectric – Piezoelectric elements and devices

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29 2535, 156643, 156646, 156656, 1566591, 219121LJ, 219121LM, 310318, 333193, 367157, 427 531, H01L 4104, H01L 4118, B44C 122, C23F 102

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046722548

ABSTRACT:
A phase and amplitude compensated surface acoustic wave (SAW) structure is described in which computer controlled compensation is achieved by laser chemical etching of selective portions of a compound chemical film deposited on the surface of a piezoelectric SAW substrate in the path of propagation. The compound film comprises a layer of amplitude attenuating cermet material formed on the substrate and a phase compensating layer of molybdenum formed over the cermet material and in contact with the substrate surface.

REFERENCES:
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patent: 4442574 (1984-04-01), Wanuga et al.
"Automated Pulsed Technique for Measuring Phase and Amplitude Response of SAW Devices", J. H. Holtham & R. C. Williamson, IEEE 1978.
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"Surface Acoustic-Wave Devices", McGraw-Hill Encyclopedia of Electronics and Computers, 1984, pp. 793-796.
"Attenuating Thin Films for SAW Devices", A. C. Anderson, V. S. Dolat, & W. T. Brogan, IEEE 1980 Ultrasonics Symposium.
"Laser Direct Writing for VLSI", D. J. Erlich & J. Y. Tsao, VLSI Electronics: Microstructure Science, vol. 7, 1983.
"Laser Chemical Technique for Rapid Direct Writing of Surface Relief in Silicon", D. J. Ehrlich, R. M. Osgood, Jr., & T. F. Deutsch, Appl. Phys. Lett. 38(12), Jun. 1981, American Inst. of Physics.
"Nonreciprocal Laser-Microchemical Processing: Spatial Resolution Limits and Demonstration of 0.2-.mu.m Linewidths", D. J. Ehrlich & J. Y. Tsao, Appl. Phys. Lett. 44(2), Jan. 1984, American Inst. of Physics.

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