Coherent light generators – Particular active media – Semiconductor
Patent
1987-11-05
1989-01-31
Sikes, William L.
Coherent light generators
Particular active media
Semiconductor
372 26, 372 45, 372 46, H01S 319, H01S 310
Patent
active
048021822
ABSTRACT:
A monolithic two dimensional waveguide coupled cavity laser/modulator structure for high speed modulation comprising a plurality of semiconductor layers on a semiconductor substrate. One of the semiconductor layers functions as an active region. Impurity induced disordering techniques are utilized to form first and second active mediums in the structure having co-axial two dimensional optical cavities. One of these active mediums functions as a laser and the other as a modulator. A passive two dimensional waveguide is integrally formed between the two active mediums having a highest refractive index at its core with diminishing refractive index omnidirectionally from its core with waveguide core having a energy bandgap level higher than both of the active mediums exhibiting low optical absorption at the gain wavelength of either of the active mediums. The modulator can be operated between an electro-absorption mode and a gain modulation mode while the laser is current pumped above threshold with the modulated optical switching of the output of said laser being less than 100 picoseconds as a function of applied voltage to said modulator varied in a range of 0 to 2 volts as illustrated by the curves in FIG. 14.
REFERENCES:
patent: 4028146 (1977-06-01), Logan et al.
patent: 4136928 (1979-01-01), Logan et al.
patent: 4558449 (1985-12-01), Gordon
patent: 4594603 (1986-06-01), Holonyak, Jr.
Sham et al., "Monolithic Integration of GaAs (GaAl)As Light Modulators and Distributed-Bragg-Reflectors Lasers", Appl. Phys. Lett. 32(5), Mar. 1, 1978, pp. 314-316.
K. Wakita et al, "Long-Wavelength Waveguide Multiple Quantum Well (MQW) Optical Modulator with 30:1 On/Off Ratio", Electronic Letters, vol. 22(17), pp. 907-908 (Aug. 14, 1986).
Y. Kawamura et al, "Monolithic Integration of InGaAsP/InP DFB Lasers and InGaAs/InAlAs MQW Optical Modulators", Electronic Letters, vol. 22(5), pp. 242-243 (Feb. 27, 1986).
N. K. Dutta et al, "Integrated External Cavity Laser", Applied Physics Letters, vol. 49(19), pp. 1227-1229 (Nov. 19, 1986).
K. Meehan et al, "Disorder of an Al.sub.x Ga.sub.1-x As-GaAs Superlattice by Donor Diffusion", Applied Physics Letters, vol. 45(5), pp. 649-651 (Sep. 1, 1984).
R. L. Thornton et al, "High Efficient, Long Lived AlGaAs Lasers Fabricated by Silicon Impurity Induced Disordering", Applied Physics Letters, vol. 49(3), pp. 133-134 (Jul. 21, 1966).
R. L. Thornton et al, "High Power (2.1W) 10-Stripe AlGaAs Laser Arrays with Si Disordered Facet Windows", Applied Physics Letters, vol. 49(23), pp. 1572-1574 (Dec. 8, 1986).
F. Julien et al, "Impurity-Induced Disorder-Delineated Optical Waveguides in GaAs-AlGaAs Superlattices", Applied Physics Letters, vol. 50(14), pp. 866-868 (Apr. 6, 1987).
J. Ungar et al, "High Power GaAlAs Window Lasers", Electronic Letters, vol. 22(5), pp. 279-280 (Feb. 27, 1986).
Paoli Thomas L.
Thornton Robert L.
Carothers, Jr. W. Douglas
Epps Georgia Y.
Sikes William L.
Xerox Corporation
LandOfFree
Monolithic two dimensional waveguide coupled cavity laser/modula does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Monolithic two dimensional waveguide coupled cavity laser/modula, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Monolithic two dimensional waveguide coupled cavity laser/modula will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-183085