Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including dielectric isolation means
Patent
1994-09-07
1995-09-19
Ngo, Ngan
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including dielectric isolation means
257 52, 257301, 257514, 257636, 257640, 437 60, 437 67, 437161, 437 919, H01L 2702, H01L 2968, H01L 2978
Patent
active
054518091
ABSTRACT:
A semiconductor device has a substrate and a trench formed therein, the semiconductor device including a dielectric formed on the surface of the trench, a first amorphus silicon film formed on the dielectric film, a dopant film, a second amorphus silicon film, and a capping film formed between the dopant film and one of the first and second amorphus silicon films, the dopant film being formed between the other of the first and second amorphus silicon films and the capping film. The capping film is formed from one of silicon oxide and silicon nitride. A method of forming a film structure in a trench, the trench having a dielectric film formed on a surface of the trench, includes steps of a forming a first amorphus silicon film on the dielectric film, forming a dopant film, forming a second amorphus silicon film and forming a capping film between the dopant film and one of the first and second amorphus silicon films, the dopant film being formed between the other of the first and second amorphus silicon films and the capping film.
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Shiozawa Jun-ichi
Tsunashima Yoshitaka
Kabushiki Kaisha Toshiba
Ngo Ngan
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