Method of forming mask alignment marks

Fishing – trapping – and vermin destroying

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

437229, 437924, 437233, 437235, 437245, H01L 21465, H01L 21312

Patent

active

051282836

ABSTRACT:
A method of producing a semiconductor device including processes of forming an optically transparent film on a semiconductor substrate having an alignment mark, and thereafter forming an optically opaque film, includes the step of selectively etching said transparent film to remove at least a part thereof disposed above said alignment mark, and thereafter forming said optically opaque film on said semiconductor substrate. A method of producing a semiconductor device including a step of making a measurement mark formed on a semiconductor substrate for measuring relative error amount caused during alignment inlcudes the steps of forming an optically transparent film on said semiconductor substrate provisionally formed with an aligning pattern of said measurement mark, thereafter selectively etching said transparent film to remove a region thereof above said aligning pattern of said measurement mark and to remove another region thereof for a later formed to-be-aligned pattern, thereafter forming an optically opaque film on said semiconductor substrate, and then coating a photo-sensitive film and carrying out exposue and development so as to form a remaining to-be-aligned pattern of said measurement mark.

REFERENCES:
patent: 3600241 (1971-08-01), Doo et al.
patent: 3802940 (1974-04-01), Villers et al.
patent: 4134066 (1979-01-01), Vogel et al.
patent: 4233091 (1980-11-01), Kawabe
patent: 4356223 (1982-10-01), Iida et al.
patent: 4640888 (1987-02-01), Itoh et al.
patent: 4642672 (1987-02-01), Kitakata

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method of forming mask alignment marks does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming mask alignment marks, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming mask alignment marks will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1829538

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.