SOI MOS transistor with a substrate-source connection

Details SOI MOS transistor with a substrate-source connection SOI MOS transistor with a substrate-source connection

1990-06-07

1992-02-18

Jackson, Jr., Jerome

357 4, 357 59, H01L 2978, H01L 2904

Patent

active

050898701

ABSTRACT:
An SOI MOS transistor comprises at least a highly doped lateral stripe (13, 14) of the same conductivity type as the substrate (3). This stripe extends along the edge of the substrate and of the source region (5) and is shorted with the source region through the conductive source layer (11).

REFERENCES:
patent: 4423432 (1983-12-01), Stewart

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