Intergrated semiconductor device including a frequency divider f

Details Intergrated semiconductor device including a frequency divider f Intergrated semiconductor device including a frequency divider f

1991-05-16

1992-02-18

Heyman, John S.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

328 25, 331 51, 331115, 377 47, H03K 2102

Patent

active

050897179

ABSTRACT:
An integrated semiconductor device including a frequency divide-by-two circuit comprising an inverter stage and a switching transistor (T2) which is controlled by a microwave input signal (E). The divider circuit includes an oscillator stage in that the inverter stage is at least equipped with a reactive element which in combination with the inverter stage forms a negative resistant network. The switching transistor is connected in parallel with this reactive element and the transmit time .tau..sub.0 of the switch is less than the transit time .tau..sub.2 of a signal propagating through the reactive element.

REFERENCES:
patent: 2594336 (1952-04-01), Mohr
patent: 2985770 (1961-05-01), Kneisel
patent: 3119983 (1964-01-01), Carroll et al.
patent: 3629727 (1971-12-01), Berney
patent: 3671880 (1972-06-01), Kuiper et al.
patent: 3997796 (1976-12-01), Sanders et al.
patent: 4621239 (1986-11-01), Tserng
patent: 4630003 (1986-12-01), Torizuka et al.
patent: 4638180 (1987-01-01), Sagawa et al.
patent: 4695940 (1987-09-01), Rein

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