Low forward voltage drop semiconductor device having polycrystal

Details Low forward voltage drop semiconductor device having polycrystal Low forward voltage drop semiconductor device having polycrystal

1977-01-24

1979-03-27

Clawson, Jr., Joseph E.

357 38, 357 51, 357 90, H01L 2904

Patent

active

041469062

ABSTRACT:
A semiconductor device has one layer of a diode formed by diffusion of an impurity from a polycrystalline layer portion formed on a region in which the layer is to be formed. The polycrystalline layer portion is composed of two layers, the resistivity of the polycrystalline layer closer to the above-mentioned one layer of the diode being higher than that of the other polycrystalline layer.

REFERENCES:
patent: 3460007 (1969-08-01), Scott
patent: 3504239 (1970-03-01), Johnson et al.
patent: 3609476 (1971-09-01), Storm
patent: 3892606 (1975-07-01), Chappglow et al.
patent: 3902188 (1975-08-01), Jacobson
patent: 4008484 (1977-02-01), Maekawa et al.

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