Semiconductor device having complementary transistor structures

Details Semiconductor device having complementary transistor structures Semiconductor device having complementary transistor structures

1978-02-13

1979-03-27

Larkins, William D.

357 34, 357 48, 357 49, 357 59, 357 89, H01L 2702, H01L 2712, H01L 2704, H01L 2972

Patent

active

041469054

ABSTRACT:
A semiconductor device includes a body comprising two planar complementary transistor structures preferably but not exclusively with dielectric insulation. Both complementary transistor structures comprise parts of two epitaxial layers of opposite conductivity types present one on top of the other, the first layer forming the base zone of the first transistor and the second layer forming the collector zone of the second transistor, the emitter zone of the first transistor and the base zone of the second transistor being formed by parts of the second layer.

REFERENCES:
patent: 3423255 (1969-01-01), Joyce
patent: 3507713 (1970-04-01), Kravitz
patent: 3591430 (1971-07-01), Schlegel
patent: 3722079 (1973-03-01), Beasom
patent: 3752715 (1973-08-01), Antipov et al.
patent: 3764409 (1973-10-01), Nomura et al.
patent: 3797102 (1974-03-01), Huffman
patent: 3858237 (1974-12-01), Sawazaki et al.
patent: 3912555 (1975-10-01), Tsuyuki
patent: 3938176 (1976-02-01), Sloan
patent: 3954522 (1976-05-01), Roberson
patent: 4007474 (1977-02-01), Yagi et al.
patent: 4027324 (1977-05-01), Yagi et al.
patent: 4032957 (1977-06-01), Yagi et al.
Chang et al., "Fabrication of PNP and NPN Transistors In a Single Wafer or Chip," IBM Tech. Disclosure Bulletin, vol. 11, (5/69), pp. 1653-1654.
Jacobus et al., "Complementary Transistors," IBM Technical Disclosure Bulletin, vol. 14, (9/71), p. 1045.

Affiliated with

Also associated with

Rating

Semiconductor device having complementary transistor structures does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device having complementary transistor structures , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device having complementary transistor structures will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1825106