Hybrid thick film integrated circuit heat dissipating and ground

Details Hybrid thick film integrated circuit heat dissipating and ground Hybrid thick film integrated circuit heat dissipating and ground

1980-10-10

1982-02-02

James, Andrew J.

357 74, 357 80, 357 81, H01L 2316, H01L 2302, H01L 2312

Patent

active

043142702

ABSTRACT:
A common emitter NPN type power transistor is directly fixed to an internal surface of a metallic housing serving as both a heat sink and a grounding terminal and a ceramic substrate provided with a thick film integrated circuit for controlling the transistor and its positive terminal perpendicular to the some is also fixed to the internal surface of the metallic housing through a layer of bonding agent to be spaced from the transistor. Alternatively the transistor may be fixed to the metallic housing through a high electrically conducting member.

REFERENCES:
patent: 3439255 (1969-04-01), Carnes et al.
patent: 3447057 (1969-05-01), Brown et al.
patent: 3539884 (1970-11-01), Schaffner
patent: 3539907 (1970-11-01), Linstedt
patent: 3763403 (1973-10-01), Lootens
patent: 4032964 (1977-06-01), Boeters
patent: 4128801 (1978-12-01), Gansert et al.
patent: 4128802 (1978-12-01), Gansert et al.

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