Method for forming an aluminum interconnect structure on an inte

Details Method for forming an aluminum interconnect structure on an inte Method for forming an aluminum interconnect structure on an inte

1978-04-03

1979-03-27

Tufariello, T. M.

Chemistry: electrical and wave energy

Processes and products

204 42, C25D 1104, C25D 1112

Patent

active

041464400

ABSTRACT:
A method for forming an interconnect structure on an integrated circuit chip by employing a single chamber for both the required etching and anodization. It has been discovered that an etchant-electrolyte such as phosphoric acid solution in the ratios of one part phosphoric acid to four parts of water can serve as both an etchant and an electrolyte without causing deterioration of the photoresist pattern representing the interconnect structure.

REFERENCES:
patent: 3827949 (1974-08-01), Platter et al.
patent: 4003772 (1977-01-01), Hanazono et al.
patent: 4045302 (1977-08-01), Gibbs et al.

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