Metal treatment – Process of modifying or maintaining internal physical... – Chemical-heat removing or burning of metal
Patent
1976-11-02
1979-03-27
Rutledge, L. Dewayne
Metal treatment
Process of modifying or maintaining internal physical...
Chemical-heat removing or burning of metal
29578, 29590, 148188, 357 59, 427 82, 427 85, 427 86, H01L 2120, H01L 21225
Patent
active
041464133
ABSTRACT:
A method of producing a semiconductor device, comprising the steps of forming a polycrystalline semiconductor layer on the exposed surface of a single crystalline semiconductor substrate, the substrate containing an impurity of one conductivity type and the polycrystalline layer an impurity of the other conductivity type, and heating the polycrystalline layer for the activation thereof at a temperature substantially preventing the impurity contained therein from being diffused into the substrate. The crystal of the substrate is kept free from lattice defect since the impurity is not diffused thereinto. In addition, this method prevents a short circuit from occurring between semiconductor regions of differing conductivity types which would otherwise be caused by deviation in the location of a mask used in the photoetching step.
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Chaudhari et al., "Growing Crack-Free Single-Crystal Films" I.B.M. Tech. Discl. Bull., vol. 15, No. 9, Feb. 1973, p. 2700.
Cuomo et al., "Method of Making Unstrained Thin Films".
Ibid vol. 15, No. 9, Feb. 1973, pp. 2698-2699.
Ajima Takashi
Mitsuno Toshio
Takaoki Kiyoshi
Yonezawa Toshio
Rutledge L. Dewayne
Saba W. G.
Tokyo Shibaura Electric Co. Ltd.
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