Method for planarizing a semiconductor device having a amorphous

Details Method for planarizing a semiconductor device having a amorphous Method for planarizing a semiconductor device having a amorphous

1993-05-25

1995-08-29

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437101, 437966, 437235, H01L 21302, H01L 21463

Patent

active

054459966

ABSTRACT:
To planarize an insulating film formed on a semiconductor substrate, a polishing slurry containing cerium oxide is used to polish the surface of the insulating film. Using the cerium oxide included slurry as a polishing agent, the insulating film is not contaminated by alkali metals during the polishing process. Furthermore, the insulating film is polished at an enhanced polishing rate.

REFERENCES:
patent: 3715842 (1973-02-01), Tredinnick et al.
patent: 4671851 (1987-06-01), Beyer et al.
patent: 4735679 (1988-04-01), Laske
patent: 4879258 (1989-11-01), Fisher
patent: 4910155 (1990-03-01), Cote et al.
patent: 4940507 (1990-07-01), Harbarger
patent: 5036015 (1991-07-01), Sandhu et al.
patent: 5064683 (1991-11-01), Poon et al.
patent: 5078801 (1992-01-01), Malik
patent: 5084071 (1992-01-01), Neuadic et al.
patent: 5110428 (1992-05-01), Prigge et al.
patent: 5166096 (1992-11-01), Cote et al.
patent: 5236861 (1993-08-01), Otsu
patent: 5246884 (1993-09-01), Jaso et al.
patent: 5262346 (1993-11-01), Bindal et al.
patent: 5272117 (1993-12-01), Roth et al.

Affiliated with

Also associated with

Rating

Method for planarizing a semiconductor device having a amorphous does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for planarizing a semiconductor device having a amorphous, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for planarizing a semiconductor device having a amorphous will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1819361