Patent
1974-07-11
1976-08-31
Sikes, William L.
357 55, H01L 2974
Patent
active
039785130
ABSTRACT:
A semiconductor controlled rectifying device comprising a substrate having a four-layer structure wherein first and second regions are formed in one of the outermost layers of the structure and wherein a gate electrode is provided between the first and second regions.
REFERENCES:
patent: 3160800 (1964-12-01), Smart
patent: 3476989 (1969-11-01), Miles et al.
patent: 3566211 (1971-02-01), Svedberg
patent: 3622845 (1971-11-01), McIntyre et al.
patent: 3725753 (1973-04-01), Garrett
patent: 3731162 (1973-05-01), Svenaga et al.
Clawson Jr. Joseph E.
Hitachi , Ltd.
Sikes William L.
LandOfFree
Semiconductor controlled rectifying device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor controlled rectifying device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor controlled rectifying device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1819334