Process for forming a silicon carbide film

Details Process for forming a silicon carbide film Process for forming a silicon carbide film

1994-05-05

1995-08-29

Breneman, R. Bruce

Fishing, trapping, and vermin destroying

117 88, 117 92, H01L 2120

Patent

active

054459923

ABSTRACT:
A semiconductor film having a very high light response of photoconductivity and good electrical characteristics such a wide band gap, for example, a non-monocrystalline silicon carbide film, is formed by decomposition reaction of a silicon-containing raw material gas and a hydrocarbon as a carbon raw material under light irradiation or high frequency, where the carbon raw material gas comprises at least one of tertiary and quaternary carbon atom-containing hydrocarbons of specific chemical formulae, and a semiconductor device using the thus formed semiconductor film is also provided.

REFERENCES:
patent: 4546008 (1985-10-01), Saitoh et al.
patent: 4568626 (1986-02-01), Ogawa
patent: 5011706 (1991-04-01), Tarhay et al.
patent: 5151296 (1992-09-01), Tokunaga

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