Semiconductor diode and method of manufacturing same

Details Semiconductor diode and method of manufacturing same Semiconductor diode and method of manufacturing same

1974-07-22

1976-08-31

Edlow, Martin H.

357 52, 357 89, H01L 2714

Patent

active

039785114

ABSTRACT:
A diode comprising a semiconductor body including at least first and second adjoining regions of the same conductivity type. The first region includes the diode junction and has a high resistivity, while the second region has a high impurity concentration that varies gradually and increases with increasing distance from the interface between the first and the second regions. The second region comprises two adjoining zones, the zone removed from the first region being more highly doped than the zone proximate said region.
The method of manufacturing the above-described diode.

REFERENCES:
patent: 3226614 (1965-12-01), Haenichen

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