Method for manufacturing a trench in a substrate for use in smar

Details Method for manufacturing a trench in a substrate for use in smar Method for manufacturing a trench in a substrate for use in smar

1994-07-11

1995-08-29

Fourson, George

Fishing, trapping, and vermin destroying

437 62, 437228, H01L 2176

Patent

active

054459885

ABSTRACT:
A method for manufacturing a trench in a substrate that has at least a first silicon layer, an insulating layer and a second silicon layer is disclosed. A first trench etching through the first silicon layer down to the insulating layer is implemented using a trench mask. By reinforcing the trench mask with a non-conformally deposited protective layer, the insulating layer is etched through down to the second silicon layer in a second trench etching. The method is particularly suited for the manufacture of insulation trenches having integrated substrate contacting for smart-power technology on an SOI substrate.

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