Photosensitive semiconductor device

Details Photosensitive semiconductor device Photosensitive semiconductor device

1975-04-18

1976-08-31

Edlow, Martin H.

357 58, 357 64, 357 88, 357 89, H01L 2714, H01L 29167

Patent

active

039785092

ABSTRACT:
A semiconductor device having a photosensitive semiconductor element, for example a photoresistor, having a photosensitive layer of high-ohmic material, preferably gold-compensated silicon, which is present on a high-ohmic substrate region and which is covered with a highly doped semiconductor surface layer.
According to the invention, an epitaxial intermediate layer is present between the substrate region and the photosensitive layer and has a resistivity which lies between that of the photosensitive layer and that of the substrate region, while the surface layer, which is preferably partly etched away prior to the provision of the electrode, is grown epitaxially on the photosensitive layer.

REFERENCES:
patent: 3668555 (1972-06-01), Kasperkovitz

Affiliated with

Also associated with

Rating

Photosensitive semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Photosensitive semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Photosensitive semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1819270