Structure and method for increasing the dielectric constant of i

Details Structure and method for increasing the dielectric constant of i Structure and method for increasing the dielectric constant of i

1992-03-19

1993-06-01

Griffin, Donald A.

Electricity: electrical systems and devices

Electrostatic capacitors

Fixed capacitor

29 2542, 365145, 257295, H01G 406, H01G 900, H01G 700, G11C 1122

Patent

active

052165728

ABSTRACT:
A ferroelectric capacitor for use in integrated circuits and having an asymmetric operation. The capacitor has a bottom electrode, a layer of ferroelectric material over the bottom electrode, a dielectric spacer on the sides of the bottom electrode and ferroelectric material, and a top electrode over the layer of ferroelectric material. The bottom and top electrode are comprised of different materials. Alternatively, an ion implantation region is formed in the top surface of the layer of ferroeletric material. A method of forming the asymmetric ferroelectric capacitor is also disclosed.

REFERENCES:
patent: 4437139 (1984-03-01), Howard
patent: 4589056 (1986-05-01), Stimmell
patent: 5046043 (1991-09-01), Miller et al.
patent: 5119154 (1992-06-01), Gnadinger
patent: 5122477 (1992-06-01), Wolters et al.
patent: 5122923 (1992-06-01), Matsubara et al.

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