Method of forming integrated limiter and amplifying devices

Fishing – trapping – and vermin destroying

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

437184, 437179, 437912, H01L 2170, H01L 2700

Patent

active

054459850

ABSTRACT:
Integrated circuit structure and processing is provided for a high power limiter including at least a first anti-parallel array of monolithically integrated Schottky diodes. In a further embodiment, integrated circuit structure and processing is provided for an MMIC, microwave and millimeter wave monolithic integrated circuit, including an amplifier and a high power limiter monolithically integrated on the same substrate.

REFERENCES:
patent: 4098921 (1978-07-01), Calviello
patent: 4131858 (1978-12-01), Niehenke et al.
patent: 4301233 (1981-11-01), Calivello
patent: 4511813 (1985-04-01), Pan
patent: 4665413 (1987-05-01), Calviello
patent: 4683443 (1987-07-01), Young et al.
patent: 4789645 (1988-12-01), Calviello et al.
patent: 4810980 (1989-03-01), Heston et al.
patent: 4876176 (1989-10-01), Calviello et al.
patent: 5047829 (1991-09-01), Seymour et al.
"High Performance GaAs Quasi-Planar Varactors for Millimeter Waves", J. Calviello et al, IEEE Trans. an Elect. Devices, vol. ED 21, No. 10, Oct. 1974, pp. 624-630.
"An Improved High Temperature GaAs Schottky Junction", J. Calviello et al. Conf. on Active Semiconductor Devices for Microwaves and Integrated Optics, Cornell University, Ithaca, N.Y., Aug. 19-21, 1975.
"Performance and Reliability of an Improved High-Temperature GaAs Schottky Junction and Native-Oxide Passivation", J. A. Calviello et al, IEEE Trans. an Elect. Devices vol. ED 24, No. 6, Nov. 1977, pp. 798-804.
"Wide-Band Subharmonically Pumped W-Band Mixer in Single-Ridge Fin-Line" P. J. Meier et al, IEEE Trans. on MTT-S vol. MTT-30, No. 12, Dec, 1982.
"First Successful Fabrication of High-Performance All-Refractory-Metal (Ta-Au) GaAs FET Using Very Highly Doped N+ Layers and Nonalloyed Ohmic Contacts," J. A. Calviello et al, Electronics Letters, vol. 22, No. 10, May 1986, pp. J10-J12.
"Ka-Band Front End With Monolithic Hybrid, and Lumped-Element IC's", P. Meier et al, IEEE Transaction on MTT vol. 34, No. 4, Apr. 1986.
"A High-Performance, Quasi-Monolithc 2 to 18 GHz Distributed GaAs FET Amplifier", A. Cappello et al, MTT-S 1987 Symposium, Las Vegs, Nev.
"Integration of High-Q GaAs Varactor Diodes and 0.25 .mu.m GaAs MESFET's for Multimeter-Wave Monolithic Circuit Applications", M. Gary McDermott et al, IEEE Trans on Microwave Theory and Techniques, vol. 38, No. 9, Sep. 1990, pp. 1183-1190.
"Wide-Band Limiting Amplifiers with Low Second Harmonic Distortion, Utilizing GaAs MMIC Limiters", Crescenzi et al, IEEE-MTT-S International Microwave Symposium Digest, 1985, pp. 328-331.
"Monolithic Limiting Amplifiers For EW Systems", I. J. Bahl and E. L. Griffin, Microwave Journal, vol. 30, No. 9, Sep. 1987, pp. 205-209.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method of forming integrated limiter and amplifying devices does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming integrated limiter and amplifying devices, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming integrated limiter and amplifying devices will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1819225

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.