Method of making shallow trench source EPROM cell

Details Method of making shallow trench source EPROM cell Method of making shallow trench source EPROM cell

1994-03-08

1995-08-29

Chaudhari, Chandra

Fishing, trapping, and vermin destroying

437 38, 437203, H01L 218247

Patent

active

054459818

ABSTRACT:
A Flash EPROM cell having buried source-side injection allows for low voltage programming from the source side. A cell having the inventive structure can be programmed at 4.0 V or less. The inventive cell comprises a source area which is at a lower plane than the drain region, and a program charge is transferred to the floating gate through the source-side injector. Instead of using a self-aligned high-energy n-type dopant implant at the source side to form the source side injector as used with previous cells, which can be difficult to control, etching the substrate before impurity doping allows for the controllable formation of a sharp point of doped silicon, and allows for improved programming at a lower voltage.

REFERENCES:
patent: 4997777 (1991-03-01), Boivin
patent: 5019527 (1991-05-01), Ohshima et al.
patent: 5049515 (1991-09-01), Tzeng

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