Method of making power device with buffered gate shield region

Details Method of making power device with buffered gate shield region Method of making power device with buffered gate shield region

1994-05-13

1995-08-29

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437154, H01L 2910, H01L 2978

Patent

active

054459788

ABSTRACT:
The present invention provides a gate buffer region between a gate shield region and active cells of a power device. This gate buffer region may, for example, be a relatively narrow, strip-like doped region which extends into an epitaxial layer from an upper surface of the epitaxial layer. The gate shield region is connected to a source electrode of the power device via a relatively high impedance connection. The gate buffer region, on the other hand, is connected to the source electrode with a relatively low impedance connection. This relatively low impedance connection may, for example, be a substantially direct metallized connection from a metal source electrode to the gate buffer region at the surface of the epitaxial layer.

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