Fishing – trapping – and vermin destroying
Patent
1994-01-11
1995-08-29
Hearn, Brian E.
Fishing, trapping, and vermin destroying
437912, 437177, 437 27, 437 41, H01L 21265
Patent
active
054459770
ABSTRACT:
A field effect transistor structure is disclosed. A SiN insulating layer is deposited on a semi-insulating GaAs substrate. A slit window is formed to determine the effective gate length formed after pattern forming a high density n-type region by ion implanting on the semi-insulating GaAs substrate. A n-type active region is formed by ion implanting a p-type impurity. An insulating layer is used as an ion implanting mask in a partial compensation of the n-type region. At the same time, a p-type region is formed under the n-type active region. A high melting point to make a Schottky gate electrode is deposited and then annealed. The high melting point metal layer is left as a gate electrode and a low specific resistance connecting metal layer is deposited on the gate electrode.
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Gurley Lynne A.
Hearn Brian E.
Matsushita Electric - Industrial Co., Ltd.
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