Semiconductor photoconductive device with laminated refractory m

Details Semiconductor photoconductive device with laminated refractory m Semiconductor photoconductive device with laminated refractory m

1991-10-15

1993-06-01

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Amorphous semiconductor material

136256, 257292, 257435, 257459, 257448, 257453, H01L 2714

Patent

active

052164918

ABSTRACT:
A semiconductor device constituting a light detection element in which a photoconductive layer is sandwiched between a transparent electrode and a metal electrode, in which the metal electrode has a lamination structure consisted by two different metals, one of the metals on the photoconductive layer side being formed of tantalum (Ta) or tungsten (W), the other of the metals being formed of titanium (Ti). Thereby, silicide is prevented from being formed in the interface to the photoconductive layer, so that the titanium (Ti) can be made to act as a good etching stopper at the time of patterning the photoconductive layer by etching, and since titanium (Ti) which has high electrolytic-corrosion-proof is used as the metal electrode, it is possible to obtain a semiconductor device having high reliability.

REFERENCES:
patent: 4082568 (1978-04-01), Lindmayer
patent: 4366336 (1982-12-01), Donaghey
patent: 5049954 (1991-09-01), Shimada et al.
Sequeda, "The Role of Thin Film Materials on the Technology of Integrated Circuit Fabrication", Journal of Metals, Nov. 1985, pp. 54-59.
Holloway et al., "Tantalum as a Diffusion Barrier Between Copper and Silicon", Appl. Phys. Lett., 57(17), Oct. 22, 1990, pp. 1736-1738.
Ting et al., "The Use of titanium-Based Contact-Barrier Layers in Silicon Technology", Thin Solid Films, 96 (1982), pp. 327-345.

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