Semiconductor device

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357 28, H01L 2978

Patent

active

044172630

ABSTRACT:
A semiconductor device for generating a constant voltage and comprised of a pair of MOS field effect transistors of the same conductivity type connected in series. A first of the transistors is a depletion type and has a gate connected to its source and its source connected to its substrate so as to operate as an active device. The second transistor has a gate connected to its drain and a source connected to its substrate. When a supply voltage is applied across the series combination of the first and second transistors, a constant voltage is developed at the connection node between the first and second transistors.

REFERENCES:
patent: 4321484 (1982-03-01), Blaser
patent: 4346344 (1982-08-01), Blauschild
patent: 4347476 (1982-08-01), Tam

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