1981-01-16
1983-11-22
Edlow, Martin H.
357 28, H01L 2978
Patent
active
044172630
ABSTRACT:
A semiconductor device for generating a constant voltage and comprised of a pair of MOS field effect transistors of the same conductivity type connected in series. A first of the transistors is a depletion type and has a gate connected to its source and its source connected to its substrate so as to operate as an active device. The second transistor has a gate connected to its drain and a source connected to its substrate. When a supply voltage is applied across the series combination of the first and second transistors, a constant voltage is developed at the connection node between the first and second transistors.
REFERENCES:
patent: 4321484 (1982-03-01), Blaser
patent: 4346344 (1982-08-01), Blauschild
patent: 4347476 (1982-08-01), Tam
Adams Bruce L.
Burns Robert E.
Edlow Martin H.
Kabushiki Kaisha Daini Seikosha
Lobato Emmanuel J.
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