Transferred electron devices

Details Transferred electron devices Transferred electron devices

1977-09-06

1983-11-22

Larkins, William D.

357 6, 357 58, H01L 4702, H01L 4700

Patent

active

044172613

ABSTRACT:
A transferred electron device includes a novel cathode giving improvement in the dc to microwave conversion efficiency over a wide temperature range. The cathode comprises a narrow n.sup.+ semiconductor zone next to the device active region or layer and, next to the n.sup.+ zone, a high field contact which includes a region of semiconductor.

REFERENCES:
patent: 3600705 (1971-08-01), Tantraporn et al.
patent: 3614549 (1971-10-01), Lorenz et al.
patent: 3836990 (1974-09-01), Harth
patent: 3977015 (1976-08-01), Irving et al.
patent: 4006490 (1977-02-01), Moutou et al.
Gray et al., "InP Microwave Oscillators with 2-Zone Cathodes", Electronics Letters, Aug. 21, 1975, vol. 11, No. 17, pp. 402-403.
Aspnes et al., "Ordering . . . of L.sub.6.sup.c and X.sub.6.sup.c . . . minima in GaAs", Phys. Rev. Lett. 37, 766-769 (Sep. 20, 1976).

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