Resistorless trim amplifier using MOS devices for feedback eleme

Amplifiers – With semiconductor amplifying device – Including gain control means

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

330 86, 3072468, H03G 312

Patent

active

052163857

ABSTRACT:
A MOS voltage trim amplifier which can multiply an input voltage with a quantized value to generate an output voltage. The MOS trim amplifier comprises a MOS op-amp, a multiplying feedback network, a gate-bias network and startup circuit. The MOS op-amp has a noninverting terminal for receiving the input and an inverting terminal for receiving the feedback network. The multiplying feedback network uses two MOSFETs as feedback elements to provide the voltage ratio for the multiplication. The gate-bias network provides a reference voltage which is a fraction of the input voltage through a MOSFET voltage divider to the feedback MOSFETs. Current mirrors are employed in the gate-bias network to provide a constant stable current through the MOSFET voltage divider to avoid loading the input. The startup circuit generates a bias current to the two feedback MOSFETs to drive them out of their natural off state.

REFERENCES:
patent: 4100437 (1978-07-01), Hoff, Jr.
patent: 4451795 (1984-05-01), Kilian
patent: 4500845 (1985-02-01), Ehni
patent: 4994688 (1991-02-01), Horiguchi et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Resistorless trim amplifier using MOS devices for feedback eleme does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Resistorless trim amplifier using MOS devices for feedback eleme, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Resistorless trim amplifier using MOS devices for feedback eleme will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1817702

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.