Tri-state logic buffer circuit

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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Details

307450, H03K 19003, H03K 19094, H03K 19173, H03K 1920

Patent

active

044171625

ABSTRACT:
A first MOS (metal-oxide-semiconductor) NOR-gate device feeding a second MOS NOR-gate device feeding an MOS output load device is arranged to yield a three output level buffer circuit, that is, whose output to a common data bus line can be "high" ("1"), "low" ("0"), or of very high impedance ("floating"). Each NOR-gate contains a low .beta. ("load") depletion mode type of MOS transistor and a high .beta. ("driver") enhancement mode type of MOS; the output load device contains an output driver enhancement mode type of MOS transistor and an output load MOS transistor having a threshold intermediate that of the depletion mode and enhancement mode type of MOS transistor. In this manner, only a single voltage source V.sub.DD, or typically about +5 volts in N-MOS integrated circuit technology is required to power the buffer circuit completely.

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patent: 4161040 (1979-07-01), Satoh
Homan, "FET Depletion Load Push-Pull Logical Circuit"; IBM Tech. Discl. Bull., vol. 18, No. 3, pp. 910-911, 8/1975.
Love, "In-Phase Weak-Signal Input Circuit"; IBM Tech. Discl. Bull., vol. 19, No. 12, pp. 4673, 5/1977.

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