Optimizing doping control in short channel MOS

Details Optimizing doping control in short channel MOS Optimizing doping control in short channel MOS

1992-05-07

1993-06-01

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437164, 148DIG111, H01L 21266

Patent

active

052159370

ABSTRACT:
An improved process is provided for fabricating short channel complementary metal oxide semiconductor devices. The devices comprise source and drain regions separated by gate regions. The process comprises forming a shallow channel doping region (12') beneath the surface of a semiconductor (10) and forming source-drain regions (20') of opposite conductivity type (formerly known as lightly doped drain structures) on either side of the shallow doping region. A gate oxide (16) is formed on the surface of the semiconductor above the shallow channel doping region and a gate electrode (18) is formed to the gate oxide subsequent to the formation of the shallow channel doping region. The process permits spacing of the channel doping from the source-drain doping with self-alignment. Further, the doping of the source-drain regions is not constrained to the values of the lightly-doped structures of the prior art.

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