Fishing – trapping – and vermin destroying
Patent
1992-09-04
1993-06-01
Thomas, Tom
Fishing, trapping, and vermin destroying
437 48, 437 52, 437195, 437228, 437235, H01L 2170
Patent
active
052159337
ABSTRACT:
The present invention provides a method of manufacturing a nonvolatile semiconductor memory device comprising a floating gate, a control gate, source and drain regions, and a wiring layer connected to the source or drain region. An insulation film having a flat surface is formed to fill the contact hole for the source or drain region, and an insulation film containing phosphorus is formed on the insulation film. The particular construction permits the insulation film to be uniform in thickness so as to improve the charge retaining capability of the floating gate.
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Adams et al., "Planarization of Phosphorus Doped Silicon dioxide" J. of Electrochem Soc. Feb. 1981 pp. 423-429.
Kabushiki Kaisha Toshiba
Thomas Tom
LandOfFree
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