Method of making extended body contact for semiconductor over in

Details Method of making extended body contact for semiconductor over in Method of making extended body contact for semiconductor over in

1992-07-27

1993-06-01

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 21, 437 44, 437 63, H01L 21265

Patent

active

052159310

ABSTRACT:
A semiconductor over insulator transistor is provided preferably of a lightly doped drain ("LDD") profile. LDD transistor (74) includes a semiconductor mesa (76) formed over an insulating layer (94) which overlies a semiconductor substrate (96). Semiconductor mesa (76) includes a source region (78) and a drain region (80) at opposite ends thereof. A body node (82) is disposed between source and drain regions (78,80). A low resistance contact region (98) lies along substantially the entire width of body region (82) and contacts a vertical contact which permits electrical contact from the top surface of semiconductor mesa (76) to low resistance contact region (98). Low resistance contact region (98) may be extended to fully underlie source region (78) such that the vertical contact may be moved away from body node (82).

REFERENCES:
patent: 4312680 (1982-01-01), Hsu

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