Method of fabricating semiconductor device using at least two so

Details Method of fabricating semiconductor device using at least two so Method of fabricating semiconductor device using at least two so

1974-08-23

1976-08-31

Rutledge, L. Dewayne

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148175, H01L 2122

Patent

active

039779203

ABSTRACT:
A lateral transistor or the like is made by the steps of forming a first insulating layer on a semiconductor substrate and providing a first hole in this insulating layer so as to expose a first surface portion of the substrate. An impurity of a first conductivity type is introduced through the hole and a second hole is formed in the insulating layer so as to expose a second surface portion of the substrate spaced apart from the first portion. Then, a second insulating layer of a material different from that of the first layer is formed on the first insulating layer and on the first and second surface portions of the substrate. Subsequently, third and fourth holes are formed in the second insulating layer within the confines of these holes to expose at least portions of the first and second surface portions of the substrate. Then, an impurity of a second conductivity type is introduced into the exposed first and second surface portions of the substrate through the third and fourth holes.

REFERENCES:
patent: 3342650 (1967-09-01), Seki et al.
patent: 3484313 (1969-12-01), Tauchi et al.
patent: 3660735 (1972-05-01), McDougall
patent: 3681153 (1970-12-01), Clark et al.
patent: 3793088 (1974-02-01), Eckton, Jr.
patent: 3798080 (1974-03-01), Henning et al.

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