Method of forming silicon oxide film containing fluorine

Details Method of forming silicon oxide film containing fluorine Method of forming silicon oxide film containing fluorine

1992-01-14

1993-06-01

Lusigan, Michael

Coating processes

Coating by vapor, gas, or smoke

4272551, 427314, 427255, 4272557, 156656, C23C 1640

Patent

active

052157873

ABSTRACT:
It is an object of the present invention to provide an excellent silicon oxide film formed at a temperature of 200.degree. C. or less, a method of forming the silicon oxide film, and a selective growing method. According to the present invention, by using a vapor containing alkoxyfluorosilane as a main component, a silicon oxide film containing fluorine is formed at a temperature of 200.degree. C. or less in a reaction chamber having a predetermined temperature and a predetermined pressure. In addition, an organic film such as a photoresist film is used as a mask to selectively form the silicon oxide film. Although the silicon oxide film containing fluorine and formed on the basis of the present invention is formed at a very low temperature of 30.degree. C., this silicon oxide film has a water content smaller than that of a silicon oxide film formed at a temperature of 250.degree. C. in a conventional method. In addition, the film properties of the silicon oxide film according to the present invention are better than those of the silicon oxide film formed in the conventional method. Furthermore, a two-layered aluminum wiring structure can be easily formed by the selective growing method.

REFERENCES:
patent: 4300989 (1981-11-01), Chang
Ikeda et al., "Oxide Film Formation Using O.sub.3 /Organic-Source APCVD", Denkikagaku, 56, No. 7 (Jul. 1988), pp. 527-532.
Ikeda et al., "Ozone/Organic-Source APCVD for Conformal Doped Oxide Films", Journal of Electronic Materials, vol. 19, No. 1, Jan. 1990, pp. 45-49.

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