Higher impedance pull-up and pull-down input protection resistor

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357 42, 357 51, 357 71, H01L 2978

Patent

active

051211793

ABSTRACT:
An integrated circuit having MIS transistors that include pull-up and pull-down gate input resistors of a high enough resistance value to be useful. The high resistance values are obtained in spite of using self-aligned refractory metal silicide films by redefining available channel stoppers to form one electrode end of the resistor and a contact region in a lightly doped substrate or well region to form the second electrode end.

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patent: 4819046 (1989-04-01), Misu
patent: 4830976 (1989-05-01), Morris et al.
patent: 4893159 (1990-01-01), Suzuki et al.

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