Structure for read-only-memory

Details Structure for read-only-memory Structure for read-only-memory

1996-11-12

1998-12-08

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

257380, 257758, H01L 2900

Patent

active

058474420

ABSTRACT:
A read-only memory having sets of word lines and bit lines orthogonal to each other and separated by an insulator. At specific cell sites, selected by a memory algorithm, a word line is connected to bit lines by a doped or undoped polysilicon data resistor. The use of a data resistor, rather the an active device such as a MOSFET, provides a saving in space by a factor of four. The polysilicon data resistor may have a range of values, the minimum of which is determined by the number of cell sites and the resistance of the word and bit lines. The maximum value of the data resistor is determined by thermal noise considerations. Within this range, the data resistors may also have discrete values so that more than one data level may be stored at a cell site, to provide even greater storage density.

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