Bipolar transistor, semiconductor device having bipolar transist

Details Bipolar transistor, semiconductor device having bipolar transist Bipolar transistor, semiconductor device having bipolar transist

1995-08-28

1998-12-08

Saadat, Mahshid D.

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Including dielectric isolation means

257552, 257555, 257592, H01L 2900

Patent

active

058474404

ABSTRACT:
An n-type epitaxial layer is formed on a main surface of a p-type silicon substrate. An n-type buried diffusion layer is formed extending in both the p-type silicon substrate and the n-type epitaxial layer. An n-type diffusion layer is formed in the surface of the n-type epitaxial layer, which is disposed above the n-type buried diffusion layer. A p-type diffusion layer is formed so as to surround side ends of the n-type diffusion layer. A p-type buried diffusion layer is formed so as to have a bottom face within the n-type buried diffusion layer and have side ends thereof inside side ends of the p-type diffusion layer. A collector region of a vertical pnp bipolar transistor consists of the p-type buried diffusion layer and the p-type diffusion layer. A p-type diffusion layer, which serves as an emitter region of the pnp bipolar transistor, is formed in the surface of the n-type diffusion layer. Thus, a semiconductor device having a vertical pnp bipolar transistor can be obtained which is capable of reducing its manufacturing cost and improving its reliability.

REFERENCES:
patent: 4637125 (1987-01-01), Iwasaki et al.
patent: 5179036 (1993-01-01), Matsumoto
patent: 5184203 (1993-02-01), Taguchi
patent: 5302534 (1994-04-01), Monk et al.
patent: 5319234 (1994-06-01), Uga et al.
patent: 5331198 (1994-07-01), Kanda et al.

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