Integrated circuit having a void between adjacent conductive lin

Details Integrated circuit having a void between adjacent conductive lin Integrated circuit having a void between adjacent conductive lin

1996-07-09

1998-12-08

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Including dielectric isolation means

257634, 257644, H01L 2900, H01L 2358

Patent

active

058474390

ABSTRACT:
The invention proposes methods for producing integrated circuits wherein the dielectric constant between closely spaced and adjacent metal lines is approaching 1. One method of the invention uses low-melting-point dielectric to form a barrier form a void between conductive lines. Another method of the invention uses sidewall film to form a similar barrier.

REFERENCES:
patent: 4106050 (1978-08-01), Riseman
patent: 4323914 (1982-04-01), Berndlmaier et al.
patent: 4987101 (1991-01-01), Kaanta et al.
patent: 5001079 (1991-03-01), Van Laarhoven et al.
patent: 5338975 (1994-08-01), Cole, Jr. et al.
patent: 5512775 (1996-04-01), Cho
patent: 5534731 (1996-07-01), Chenng

Affiliated with

Also associated with

Rating

Integrated circuit having a void between adjacent conductive lin does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Integrated circuit having a void between adjacent conductive lin, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Integrated circuit having a void between adjacent conductive lin will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-180745