Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Patent
1997-02-26
1999-09-07
Meier, Stephen D.
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
257436, H01L 3106, H01L 310232
Patent
active
059491205
ABSTRACT:
This semiconductor photodetector includes a photoabsorption layer, an n-type first semiconductor layer, and a p-type second semiconductor layer. The photoabsorption layer comprises an n-type first layer and a p-type second layer formed in contact with the first layer. The first semiconductor layer is arranged on the side of the first layer and has a shorter wavelength at a light absorption edge and a lower refractive index than in the photoabsorption layer. The second semiconductor layer is arranged on the side of the second layer and has a shorter wavelength at a light absorption edge and a lower refractive index than in the photoabsorption layer. When a predetermined reverse bias voltage is applied between the first and second semiconductor layers, the first layer is entirely depleted and the second layer is partially depleted.
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Spectrally Selective Waveguide Photodetector, Soviet Technical Physics Letters, USA, vol. 6, No. 10, Oct. 1980, pp. 529-530.
A High-Efficiency 50 GHZ Ingaas Multimode Waveguide Photodetector, IEEE Journal of Quantum Electronics, vol. 28, No. 12, Dec. 1, 1992, pp. 2728-2735.
Kato Kazutoshi
Kozen Atsuo
Muramoto Yoshifumi
Nakajima Osaake
Yuda Masahiro
Meier Stephen D.
Nippon Telegraph and Telephone Corporation
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