Semiconductor laser for pumping light amplifier

Details Semiconductor laser for pumping light amplifier Semiconductor laser for pumping light amplifier

1995-12-19

1997-12-23

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

372 45, H01S 319

Patent

active

057013225

ABSTRACT:
A semiconductor laser includes a first conductivity type semiconductor substrate; a first conductivity type cladding layer disposed on the semiconductor substrate; an active layer disposed on the first conductivity type cladding layer for producing light having a wavelength .lambda.; a light waveguide structure including a second conductivity type cladding layer disposed on the active layer; a first conductivity type current blocking layer disposed on, contacting, and confining the light waveguide structure and containing an element absorbing light having the wavelength .lambda.; and a second conductivity type contacting layer contacting the light waveguide structure and the current blocking layer.

REFERENCES:
patent: 5363398 (1994-11-01), Glass et al.
patent: 5389797 (1995-02-01), Bryan et al.
patent: 5581570 (1996-12-01), Yoshida et al.
Shima et al, "0.78-and 0.98-.mu.m Ridge-Waveguide Lasers Buried with AlGaAs Confinement Layer Selectively Grown by Chloride-Assisted MOCVD", IEEE Journal of Selected Topics in Quantum Electronics, vol. 1, No. 2, Jun. 1995, pp. 102-109.

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