Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
Patent
1997-09-16
1998-12-08
Guay, John
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Field effect transistor
257190, 257351, 257369, 257195, H01L 29161, H01L 27092
Patent
active
058474196
ABSTRACT:
A semiconductor device comprises a semiconductor substrate, a first semiconductor layer under compressive strain formed on the semiconductor substrate, a p-type MISFET (Metal Insulator Semiconductor Field Effect Transistor) formed in a predetermined region of the first semiconductor layer, a second semiconductor layer in a lattice-relaxation condition formed on the first semiconductor layer in a region other than the predetermined region with an insulating film lying therebetween, wherein the insulating film has an opening and the first and second semiconductor layers are connected through the opening, a third semiconductor layer under tensile strain formed on the second semiconductor layer, and an n-type MISFET (Metal Insulator Semiconductor Field Effect Transistor) formed in the third semiconductor layer.
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K. Ismail, et al., "High-Transconductance n-Type Si/SiGe Modulation-Doped Field-Effect Transistors", IEEE Electron Device Letters, vol. 13, No. 5, May 1992, pp. 229-231.
T.P. Pearsall, et al., "Enhancement-and Depletion-mode p-Channel Ge.sub.x Si.sub.1-x --Modulation-Doped Fet's", IEEE Electron Device Letters, vol. EDL-7, No. 5, May 1986, pp. 308-310.
J. Welser, et al., "Strain Dependence of the Performance Enhancement In Strained-Si n-Mosfets", IEDM Technical Digest, Dec. 1994, pp. 373-376.
V.P. Kesan, et al., "High Performance 0.25 um p-Mosfets With Silicon-Germanium Channels For 300K and 77K Operation", IEDM Technical Digest, Dec. 1991, pp. 25-28.
Hiraoka Yoshiko
Imai Seiji
Kurobe Atsushi
Sugiyama Naoharu
Tezuka Tsutomu
Guay John
Kabushiki Kaisha Toshiba
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