Semiconductor ohmic contact

Details Semiconductor ohmic contact Semiconductor ohmic contact

1987-01-15

1989-01-31

Carroll, J.

357 61, 357 65, H01L 29161, H01L 2920, H01L 2348

Patent

active

048019844

ABSTRACT:
An ohmic contact to intermetallic semiconductors with a resistance of much less than 10.sup.-6 ohm cm.sup.2 can be provided by introducing between the semiconductor and an external metal contact an atomically compatible barrier-free graded layer of a conductor having at the interface with a metal external contact an energy gap width of the semiconductor less than 0.5 electron volts. An ohmic contact for gallium arsenide can be provided by a graded region of indium gallium arsenide that decreases to indium arsenide at the interface with a metal.

REFERENCES:
patent: 4144540 (1975-03-01), Bottka
patent: 4173763 (1979-11-01), Chang et al.
S. M. Sze, Physics of Semiconductor Devices, (1981), pp. 304-307.
K. Kajiyama et al., "Schottky barrier height of n-In.sub.x Ga.sub.1-x As diodes", Applied Physics Letters, vol. 23 (Oct. 1973), pp. 458-459.
C. Y. Chang et al., "Specific contact resistance of metal-semiconductor barriers", Solid-State Electronics, vol. 14 (1971), pp. 541-550.

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