Reference potential generating circuit

Details Reference potential generating circuit Reference potential generating circuit

1992-08-26

1994-11-01

Callahan, Timothy P.

Miscellaneous active electrical nonlinear devices, circuits, and

Specific identifiable device, circuit, or system

With specific source of supply or bias voltage

365226, 327541, 327544, H03K 301

Patent

active

053610008

ABSTRACT:
A reference potential generating circuit includes a plurality of MOS field effect transistors and a reference potential driver circuit. The MOS field effect transistors have different threshold voltages and a reference potential is obtained by amplifying the threshold voltage difference of the MOS field effect transistors. During the period in which a power supply potential externally supplied is lower than a predetermined target value of the reference potential, the reference potential driver circuit drives an output terminal for producing a potential corresponding to the power supply potential supplied externally. In this reference potential generating circuit, the S/N ratio is good and the circuit operation is stable, and is effective for reducing the power consumption and for increasing the integration density in semiconductor integrated circuit devices.

REFERENCES:
patent: 4477737 (1984-10-01), Ulmer et al.
patent: 4683382 (1987-07-01), Sukurai et al.
patent: 5063304 (1991-11-01), Iyengar
patent: 5109187 (1992-04-01), Guliani
patent: 5144585 (1992-09-01), Min et al.

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